A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation

Zerming Lin*, Wei Chen Chen, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, to study short-channel effects (SCEs) of our previously proposed nwfet [1] and probe its transport characteristics, we have fabricated devices with sub-100-nm channel length (l) and performed characterization at various temperatures (t). We found, for the first time, that the non-uniform dopant distribution in the gate leads to additional carrier conduction barriers, manifesting themselves in abrupt turn-on characteristics for t below 200 k with subthreshold swing (ss) smaller than what drift-diffusion theory dictates.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages38-39
Number of pages2
DOIs
StatePublished - 11 Jul 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period25/04/1127/04/11

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  • Cite this

    Lin, Z., Chen, W. C., Lin, H-C., & Huang, T. Y. (2011). A study on abrupt switching phenomena of independent double-gated poly-Si nanowire transistors under cryogenic operation. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 38-39). [5872222] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872222