@inproceedings{67319bfe877f46b7a4a7d0c4304b0db4,
title = "A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs",
abstract = "Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-diffusion (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 - 15 % variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.",
keywords = "Double-gate devices, Modeling and simulation, Quantum mechanical effects, Threshold voltage, Ultrathin body",
author = "Tang, {Chien Shao} and Lo, {Shih Ching} and Lee, {Jam Wem} and Tsai, {Jyun Hwei} and Yi-Ming Li",
year = "2004",
language = "English",
isbn = "0972842276",
series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",
pages = "145--148",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",
note = "null ; Conference date: 07-03-2004 Through 11-03-2004",
}