A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs

Chien Shao Tang; Shih Ching Lo; Jam Wem Lee; Jyun Hwei Tsai; Yi-Ming Li

A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs

Chien Shao Tang^*, Shih Ching Lo, Jam Wem Lee, Jyun Hwei Tsai, Yi-Ming Li

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (V_TH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-diffusion (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 - 15 % variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.

Original language	English
Title of host publication	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Editors	M. Laudon, B. Romanowicz
Pages	145-148
Number of pages	4
State	Published - 2004
Event	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: 7 Mar 2004 → 11 Mar 2004

Publication series

Name	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume	3

Conference

Conference	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Country	United States
City	Boston, MA
Period	7/03/04 → 11/03/04

Keywords

Double-gate devices
Modeling and simulation
Quantum mechanical effects
Threshold voltage
Ultrathin body

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Tang, Chien Shao ; Lo, Shih Ching ; Lee, Jam Wem ; Tsai, Jyun Hwei ; Li, Yi-Ming. / A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. editor / M. Laudon ; B. Romanowicz. 2004. pp. 145-148 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004).

@inproceedings{67319bfe877f46b7a4a7d0c4304b0db4,

title = "A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs",

abstract = "Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-diffusion (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 - 15 % variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.",

keywords = "Double-gate devices, Modeling and simulation, Quantum mechanical effects, Threshold voltage, Ultrathin body",

author = "Tang, {Chien Shao} and Lo, {Shih Ching} and Lee, {Jam Wem} and Tsai, {Jyun Hwei} and Yi-Ming Li",

year = "2004",

language = "English",

isbn = "0972842276",

series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

pages = "145--148",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "null ; Conference date: 07-03-2004 Through 11-03-2004",

}

Tang, CS, Lo, SC, Lee, JW, Tsai, JH & Li, Y-M 2004, A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs. in M Laudon & B Romanowicz (eds), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, vol. 3, pp. 145-148, 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Boston, MA, United States, 7/03/04.

A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs. / Tang, Chien Shao; Lo, Shih Ching; Lee, Jam Wem; Tsai, Jyun Hwei; Li, Yi-Ming.

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. ed. / M. Laudon; B. Romanowicz. 2004. p. 145-148 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs

AU - Tang, Chien Shao

AU - Lo, Shih Ching

AU - Lee, Jam Wem

AU - Tsai, Jyun Hwei

AU - Li, Yi-Ming

PY - 2004

Y1 - 2004

N2 - Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-diffusion (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 - 15 % variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.

AB - Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-diffusion (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 - 15 % variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.

KW - Double-gate devices

KW - Modeling and simulation

KW - Quantum mechanical effects

KW - Threshold voltage

KW - Ultrathin body

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BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

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