A study of mechanical lift-off technology for high-efficiency vertical LEDs using Micro-Porous GaN template

Chia Yu Lee, Da Wei Lin, Che Yu Liu, Shih Chieh Hsu, Hao-Chung Kuo, Shing Chung Wang, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×109 to 1×10 8 cm-2. The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20mA due to the high quality thin GaN and excellent heating dissipation.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
StatePublished - 1 Jan 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

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