A study of mechanical lift-off technology for high- efficiency vertical leds using micro-porous gan template

Chia Yu Lee, Da Wei Lin, Che Yu Liu, Shih Chieh Hsu, Hao-Chung Kuo*, Shing Chung Wang, Chun Yen Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×109 to 1×108 cm-2. The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20mA due to the high quality thin GaN and excellent heating dissipation.

Original languageEnglish
Title of host publicationConference on Lasers and Electro Optics, CLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2013
DOIs
StatePublished - 19 Nov 2013
EventCLEO: Applications and Technology, CLEO_AT 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Publication series

NameCLEO: Applications and Technology, CLEO_AT 2013

Conference

ConferenceCLEO: Applications and Technology, CLEO_AT 2013
CountryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

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