A study of interface trap generation by fowler-nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides

Jao Hsian Shiue*, Joseph Ya Min Lee, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

- The generation of interface traps by different stresses to 4-nni thick SiU2 gate oxide is studied. Four different kinds of constant current stresses were applied. The interface- trap density (At) generation due to hot holes under VG < 0 Fowler-Nordheim (FN) stress was characterized using quantum- yield measurement and substrate-hot-hole (SHH) stress. The interface-trap density (.Dit) generated by SHH stress increases as gate-oxide field increases. Substrate-hot-electron (SHE) stress generates much less interface-trap density (.Dit) than SHH stress. It is also observed that N2U-grown gate-oxide has smaller hole- injection probability but larger electron-injection probability than Ü2-grown oxide. N2U-grown gate oxide is shown to have less SHH stress-induced interface traps than Ü2-grown oxide in p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) devices.

Original languageEnglish
Pages (from-to)1705-1710
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume46
Issue number8
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Hot carrier
  • Interface traps
  • MOS devices
  • Stress measurement

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