A Study of Blocking and Tunnel Oxide Engineering on Double-Trapping (DT) BE-SONOS Performance

Roger Lo, Pei Ying Du, Tzu Hsuan Hsu, Chen Jun Wu, Jung Yi Guo, Chun Min Cheng, Hang Ting Lue, Yen Hao Shih, Tuo-Hung Hou, Kuang Yeu Hsieh, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Double-trapping bandgap engineered SONOS (DT BE-SONOS) [1] was proposed to provide both fast erase speed and deep erase by means of a second nitride trapping layer and an additional blocking oxide on top of BE-SONOS. Although this provides excellent erase performance but the additional layers increase the EOT and subsequently the erase voltage, thus it is desirable to minimize their impact. This work investigates exhaustively the effect of thinning down the blocking layers. Since the ISPP and high temperature retention charge loss are mainly dominated by the ONO thickness of BE-SONOS below the blocking layers, reducing the blocking layer thickness has only minor impact on ISPP and retention. Moreover, erase saturation is determined by the dynamic balance of channel hole injection and gate electron injection. Experimental data show that reducing the thickness of the oxide between two trapping layers has little impact on erase saturation once the gate injected electrons are efficiently suppressed by the top most oxide. We have also investigated retention improvement by various oxides. By using HQ-SiO2 to replace the top tunnel ONO the trapped electron out-tunneling is reduced. Thus retention may be improved without increasing the effective oxide thickness.

Original languageEnglish
Title of host publication2015 IEEE 7th International Memory Workshop, IMW 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781467369312
DOIs
StatePublished - 17 May 2015
Event2015 7th IEEE International Memory Workshop, IMW 2015 - Monterey, United States
Duration: 17 May 201520 May 2015

Publication series

Name2015 IEEE 7th International Memory Workshop, IMW 2015

Conference

Conference2015 7th IEEE International Memory Workshop, IMW 2015
CountryUnited States
CityMonterey
Period17/05/1520/05/15

Keywords

  • BE-SONOS
  • DT BE-SONOS
  • HQ-SiO2
  • nitride
  • reliability
  • retention
  • tunnel ONO

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