The Post Metallization Anneal (PMA) was investigated for Al gate lanthana (La2O3) nMISFETs with equivalent oxide thickness (EOT) ranging from 1.88 nm to 2.17 nm. Conventional Post Deposition Anneal (PDA) in N2 ambient leads to negative threshold voltage (Vth) shift. Thus, this gave rise to normally-ON characteristic . However, by using PMA in N2 ambient, we have found that normally-ON characteristic can be completely suppressed. Threshold voltages ranging from 0.13 V to 0.23 V were extracted from the extrapolation of Id-Vg Extracted subthreshold slopes were 82.7 mV/decade, 83.3 mV/decade, and 90.8 mV/decade, respectively, suggesting a fairly good interfacial quality.
|Number of pages||12|
|State||Published - 2004|
|Event||Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States|
Duration: 3 Oct 2004 → 8 Oct 2004
|Conference||Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium|
|Period||3/10/04 → 8/10/04|