A study of aluminum gate La2O3 nMISFET with post metallization anneal

Jin Aun Ng*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The Post Metallization Anneal (PMA) was investigated for Al gate lanthana (La2O3) nMISFETs with equivalent oxide thickness (EOT) ranging from 1.88 nm to 2.17 nm. Conventional Post Deposition Anneal (PDA) in N2 ambient leads to negative threshold voltage (Vth) shift. Thus, this gave rise to normally-ON characteristic [1]. However, by using PMA in N2 ambient, we have found that normally-ON characteristic can be completely suppressed. Threshold voltages ranging from 0.13 V to 0.23 V were extracted from the extrapolation of Id-Vg Extracted subthreshold slopes were 82.7 mV/decade, 83.3 mV/decade, and 90.8 mV/decade, respectively, suggesting a fairly good interfacial quality.

Original languageEnglish
Pages369-380
Number of pages12
StatePublished - 2004
EventDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
Duration: 3 Oct 20048 Oct 2004

Conference

ConferenceDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
CountryUnited States
CityHonolulu, HI
Period3/10/048/10/04

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    Ng, J. A., Ohmi, S. I., Tsutsui, K., & Iwai, H. (2004). A study of aluminum gate La2O3 nMISFET with post metallization anneal. 369-380. Paper presented at Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, United States.