A strategic review of recent progress in metamorphic quantum well based heterostructure electronic devices

Partha Mukhopadhyay*, Palash Das, Saptarshi Pathak, Sudip Kundu, Edward Yi Chang, Dhrabes Biswas

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Recent expansion in the demand for high performance applications require high performance devices. It can be achieved by utilizing features of the quantum well based heterostructures on metamorphic buffer. Based on this metamorphic technique two electronic devices, named high electron mobility transistors (MHEMTs) & heterojunction bipolar transistors (MHBTs) are the areas of interest now-a-days. This paper reviews the remarkable progress being made in the development of InP based MHEMT & MHBT in the context of material properties, device structures, DC and RF performances for the development of low cost, high performance power amplifier (PA) and low noise amplifier (LNA) with high linearity applications.

Original languageEnglish
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages503-506
Number of pages4
DOIs
StatePublished - 10 Nov 2008
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: 18 Aug 200821 Aug 2008

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
CountryUnited States
CityArlington, TX
Period18/08/0821/08/08

Keywords

  • HBT
  • HEMT
  • LNA
  • Linearity
  • Metamorphic
  • PA

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    Mukhopadhyay, P., Das, P., Pathak, S., Kundu, S., Chang, E. Y., & Biswas, D. (2008). A strategic review of recent progress in metamorphic quantum well based heterostructure electronic devices. In 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (pp. 503-506). [4617133] (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO). https://doi.org/10.1109/NANO.2008.151