A statistical model for simulating the effect of LTPS TFT device variation for SOP applications

Ya-Hsiang Tai*, Shih Che Huang, Wan Ping Chen, Yu Te Chao, Yen Pang Chou, Guo Feng Peng

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

In this paper, the variation characteristics of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are investigated with a statistical approach. A special layout is proposed to investigate the device variation with respect to various devices distances. Two non-Gaussian equations are proposed to fit the device parameter distributions, whose the coefficients of determination (R2) are both near 0.9, reflecting the validity of the model. Two benchmark circuits are used to compare the difference between the proposed model and the conventional Gaussian distribution for the device parameter distribution. The output behaviors of the digital and analog circuits show that the variation in the short range would greatly affect the performance of the analog circuits and would instead be averaged in the digital circuits.

Original languageEnglish
Pages (from-to)426-433
Number of pages8
JournalIEEE/OSA Journal of Display Technology
Volume3
Issue number4
DOIs
StatePublished - 1 Dec 2007

Keywords

  • Poly-Si thin-film transistor (TFT)
  • Statistical model
  • Variation

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