A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

Ting Wei Tang*, Yi-Ming Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A SPICE-compatible charge model for nanoscale MOSFETs is proposed. Based on the solution of Schrödinger-Poisson (S-P) equations, the developed compact charge model is optimized with respect to: 1) the position of the charge concentration peak; 2) the maximum of the charge concentration; 3) the total inversion charge sheet density; and 4) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses and applied voltages. Compared to the S-P results, our model prediction is within 5% of accuracy. Application of this charge quantization model to the C-V measurement produces an excellent agreement. This compact model has continuous derivatives and is therefore amenable to a device simulator. It can also be easily incorporated into circuit simulator for modeling ultrathin oxide MOSFET C-V characteristics.

Original languageEnglish
Pages (from-to)243-246
Number of pages4
JournalIEEE Transactions on Nanotechnology
Volume1
Issue number4
DOIs
StatePublished - Dec 2002

Keywords

  • C-V curve
  • Compact charge model
  • Device and circuit simulation
  • MOSFETs
  • Quantum correction
  • Schrödinger-Poisson

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