A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

Xiang Fang, Chia Ho Lin, Yung Tai Sun, Huei Tzu Chin, Hsiao-Wen Zan*, Hsin-Fei Meng, Sheng Fu Horng, Lon A. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10-5 mA/cm2 and high ON/OFF current ratio as high as 105.

Original languageEnglish
Pages (from-to)227-233
Number of pages7
JournalOrganic Electronics
Volume31
DOIs
StatePublished - 1 Apr 2016

Keywords

  • Lift-off
  • Nanoimprint lithography
  • Organic transistor
  • P3HT
  • Vertical

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