A Single-Inductor Dual-Output Converter with the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation

Hsin Chen*, Chao Jen Huang, Chun Chieh Kuo, Li Chi Lin, Yu Sheng Ma, Wen Hau Yang, Ke-Horng Chen, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Stacked mosfet structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked mosfet driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-μm process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 μA under no-load conditions.

Original languageEnglish
Article number8374966
Pages (from-to)2758-2770
Number of pages13
JournalIEEE Transactions on Power Electronics
Volume34
Issue number3
DOIs
StatePublished - 1 Mar 2019

Keywords

  • Cross regulation (CR)
  • low-dropout (LDO) regulator
  • single-inductor dual-output (SIDO) converter
  • stacked mosfet structures

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