A simultaneous tri-band on-chip rf-interconnect for future network-on-chip

Sai Wang Tam*, Eran Socher, Alden Wong, Mau-Chung Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

24 Scopus citations

Abstract

A simultaneous tri-band on-chip RF-interconnect for future network on-chip is demonstrated. Two RF bands in mm-wave frequencies, 30GHz and 50GHz, are modulated using amplitude-shift keying, while the base-band utilizes the low swing capacitive coupling technique. Each RF-Band and base-band carries 4Gbps and 2Gbps respectively. Three different bands, up to 10Gbps, are transmitted simultaneously across a shared 5mm on-chip differential transmission line. The energy per bit is 0.125pJ/b/mm in base-band, while RF-band is 0.09pJ/b/mm.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Circuits
Pages90-91
Number of pages2
StatePublished - 20 Nov 2009
Event2009 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 16 Jun 200918 Jun 2009

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Conference

Conference2009 Symposium on VLSI Circuits
CountryJapan
CityKyoto
Period16/06/0918/06/09

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