A Simplified Model of Short-Channel MOSFET Characteristics in the Breakdown Mode

Fu Chieh Hsu*, S. Muller Richard, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

When a short-channel MOSFET is driven into the avalancheinduced breakdown region, the drain current increases rapidly and usually shows a snapback characteristic. Both the substrate current and the current collected by a nearby reverse biased p-n junction also increases with increasing drain current in this region of operation. AU of these effects are associated with minority-carrier injection from the source junction into the substrate. A model for the drain I-V characteristics is proposed. Aiso presented is a related model incorporating conductivity modulation that predicts !inear relationships between the substrate and the collection currents and the drain current in this region of operation. Experimental results agree weil with the models.

Original languageEnglish
Pages (from-to)571-576
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume30
Issue number6
DOIs
StatePublished - 1 Jan 1983

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