A Simple Method to Characterize Substrate Current in MOSFET's

T. Y. Chan, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

155 Scopus citations

Abstract

Experimental verification of substrate current characteristics is thoroughly carried out. VDS — VDSAT, instead of VDS, is shown to be the driving force of all hot-electron effects. A simple relationship between substrate current and VDS — VDSAT is found. This relationship provides a convenient tool to characterize the substrate current or the channel electric field, and, hence, all hot-electron effects. Measurements of ISUB/ID and VDS — VDSAT at two bias points and any one channel length are sufficient to fully characterize the substrate currents for all channel lengths VDS's and VG's for a given technology.

Original languageEnglish
Pages (from-to)505-507
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number12
DOIs
StatePublished - 1 Jan 1984

Fingerprint Dive into the research topics of 'A Simple Method to Characterize Substrate Current in MOSFET's'. Together they form a unique fingerprint.

Cite this