A simple method for sub-100 nm pattern generation with I-line double-patterning technique

Tzu I. Tsai, Horng-Chih Lin, Min Feng Jian, Tiao Yuan Huang, Tien-Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have developed a simple method adopting double-patterning technique to extend the I-line stepper limit for the sub-100 nm poly-Si pattern generation in this work. Through in-line and cross-sectional scanned electron microscopic analyses of the generated patterns, we confirmed the feasibility of the double-patterning technique for the fabrication of nano-scale devices. Resolution capability of this technique has been confirmed to be at least 100 nm, which is much superior to the resolution limit of conventional I-line lithography. This approach has also been applied for fabricating p-channel metal-oxide-semiconductor field-effect transistors. Excellent device characteristics were verified.

Original languageEnglish
Pages (from-to)584-588
Number of pages5
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
StatePublished - 1 May 2010

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