A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices

Jin He*, Yangyuan Wang, Xing Zhang, Xuemei Xi, Mansun Chan, Ru Huang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this brief, an approximate solution of the breakdown voltage for a 6H-SiC parallel-plane junction is presented. Then a simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices is performed. It is shown that the reciprocal of the punch-through factor should be 16/21 = 0.76 for the optimum punch-through junctions used in 6H-SiC unipolar power devices and 5/21 = 0.24 for bipolar power devices. Analytical expressions for the optimal base doping concentration and base thickness are obtained as a function of the breakdown voltage subject to minimum constraints on the on-state resistance and base width for unipolar power and bipolar power devices, respectively.

Original languageEnglish
Pages (from-to)933-937
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume49
Issue number5
DOIs
StatePublished - 1 May 2002

Keywords

  • Bipolar power devices
  • Breakdown voltage
  • On-resistance
  • Punch-through junction
  • SiC
  • Unipolar power devices

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