A simple method for gettering of nickel within the Ni-metal-induced lateral crystallization polycrystalline silicon film

Chih Yuan Hou*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous Si (α-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and Ni Si2 precipitates, which degrade the device performance. In this study, we have used α-Si films with a thickness of 100 nm as an Ni-gettering layer, silicon-nitride (Si Nx) films with a thickness of 30 nm as the etching stop layers and annealed at 550°C for 90 h to reduce the Ni-metal impurity within the NILC poly-Si film.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number7
DOIs
StatePublished - 1 Jul 2006

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