A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode

Jyh-Chyurn Guo*, Teng Yang Tan

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

For the first time, a simple analytical model in the form of explicit formulas was derived for on-silicon-chip inductors. This analytical model can accurately calculate self-resonance frequencies (fSR) in TEM mode and eddy current mode corresponding to very high and very low substrate resistivities (ρSi). Furthermore, this derived model can predict and explain the interesting result that fSR keeps nearly a constant independent of ρSi in TEM and eddy current modes but is critically determined by the inductance and parasitic capacitances. The simple model is useful in on-silicon-chip inductor design for increasing fSR under specified inductance target for broadband RF circuit design and applications.

Original languageEnglish
Pages (from-to)1225-1231
Number of pages7
JournalSolid-State Electronics
Volume52
Issue number8
DOIs
StatePublished - 1 Aug 2008

Keywords

  • Eddy current mode
  • Inductor
  • Self-resonance frequency
  • Substrate resistivity
  • TEM mode

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