A Silicon Based 4.5-GHz Near-field Capacitive Sensing Imaging Array

J. Zhou, R. Al Hadi, W. Qiao, Y. Zhao, C. Chen, M. Kaynak, X. Cheng, J. C.M. Hwang, M. C.F. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a two-dimensional capacitive sensor array implemented in a 0.13- silicon technology for material characterization. The circuit is based on an oscillator operating at 4.5 GHz with a single inductor and a distributed capacitor. The 6×6 sensor array can be individually selected. When a dielectric material is in the near field of a pixel, it results in a shift of the oscillator frequency. A mixer is used to down-convert the the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data. The array is capable of detecting capacitance shift with a sensitivity down to 1.25 aF and a spatial resolution of 6 .

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages797-799
Number of pages3
ISBN (Electronic)9781728113098
DOIs
StatePublished - Jun 2019
Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
Duration: 2 Jun 20197 Jun 2019

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2019-June
ISSN (Print)0149-645X

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
CountryUnited States
CityBoston
Period2/06/197/06/19

Keywords

  • capacitive sensor
  • imaging array
  • Near-field detector
  • silicon
  • sub-wavelength imaging

Fingerprint Dive into the research topics of 'A Silicon Based 4.5-GHz Near-field Capacitive Sensing Imaging Array'. Together they form a unique fingerprint.

Cite this