A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs

T. Iinuma, N. Itoh, K. Inou, H. Nakajima, S. Matsuda, I. Kunishima, K. Suguro, Y. Katsumata, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

An advanced 0.4 μm NiSi salicide (Self-Ali gned-Silicide) base electrode bipolar technology has been developed. A very low base resistance of 91 Ω is obtained. This technology will be very useful in realizing high-performance bipolar LSIs.

Original languageEnglish
Title of host publicationBCTM 1992
Subtitle of host publicationProceedings - Bipolar/BiCMOS Circuits and Technology Meeting 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages92-95
Number of pages4
ISBN (Electronic)0780307275
DOIs
StatePublished - 1992
Event1992 Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 1992 - Minneapolis, United States
Duration: 7 Oct 19928 Oct 1992

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Volume1992-October
ISSN (Print)1088-9299

Conference

Conference1992 Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 1992
CountryUnited States
CityMinneapolis
Period7/10/928/10/92

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