An advanced 0.1 μm CMOS technology on SOI is presented. In order to minimize short channel effects, relatively thick non-delpleted (0.1μm) SOI film, highly non-uniform channel doping and source-drain extension-HALO were used. Excellent short channel effects (SCE) down to channel lengths below 0.1 μm were obtained. Very high speeds were obtained: Unloaded delay was 20 psec, and fully loaded NAND (FI=FO=3, CL=0.3 pF) delay was 130 psec at supply of 1.8 V.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1993|
|Event||1993 13th Symposium on VLSI Technology, VLSIT 1993 - Kyoto, Japan|
Duration: 17 May 1993 → 19 May 1993