A robust physical and predictive model for deep-submicrometer MOS circuit simulation

J. H. Huang*, Z. H. Liu, M. C. Jeng, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

We present a physical, predictive and efficient model (BSIM31) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications. BSIM3 can also be suitable for statistical modeling.

Original languageEnglish
Title of host publicationProceedings of the Custom Integrated Circuits Conference
PublisherPubl by IEEE
ISBN (Print)0780308263
DOIs
StatePublished - 1 Jan 1993
EventProceedings of the IEEE 1993 Custom Integrated Circuits Conference - San Diego, CA, USA
Duration: 9 May 199312 May 1993

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Conference

ConferenceProceedings of the IEEE 1993 Custom Integrated Circuits Conference
CitySan Diego, CA, USA
Period9/05/9312/05/93

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