A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

Chi Chang Wu*, Fu-Hsiang Ko, Wen Luh Yang, Hsin Chiang You, Fu Ken Liu, Chen Chih Yeh, Pin Lin Liu, Chiou Kou Tung, Ching Hwa Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

Original languageEnglish
Article number5466227
Pages (from-to)746-748
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
StatePublished - 1 Jul 2010

Keywords

  • Flash memory
  • hole trapping
  • nanocrystal (NC)
  • sol-gel

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