A roadmap for nano-CMOS

Hiroshi Iwai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


Logic CMOS technology roadmap for '22 nm and beyond' is described with ITRS (International Technology Roadmap for Semiconductor) as a reference. In the ITRS 2008 Update published just recently, there has been some significant change in the trend of the gate length. The predicted trend has been amended to be less aggressive from the ITRS 2008-Update, resulting in the delay in the gate-length shrinkage for 3 years in the short term and 5 years in the long term from those predicted in ITRS 2007. Regarding the downsize limit, it would take probably 20 to 30 years until we reach the final limit, because the duration between the generations will become longer when approaching the limit. In order to suppress the off-leakage current, double gate (DG) or fin-FET type MOSFETs are the most promising. Then, it is a natural extension for DG FETs to evolve to Si-nanowire MOSFETs as the ultimate structure of transistors for CMOS circuit applications. Si-nanowire FETs are more attractive than the conventional DG FETs because of higher on-current conduction due to their quantum nature and also because of their adoptability for high-density integration including that of 3D. Then, what will come next after reaching the final limit of the downsizing? The answer is new algorithm. In the latter half of this century, the application of algorithm used for the natural bio system will make the integrated circuits operation tremendously high efficiency. Much higher performance with ultimately low power consumption will be realized.

Original languageEnglish
Title of host publicationECS Transactions - ULSI Process Integration 6
PublisherElectrochemical Society Inc.
Number of pages10
ISBN (Print)9781566777445
StatePublished - 2009
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 4 Oct 20099 Oct 2009

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


ConferenceULSI Process Integration 6 - 216th Meeting of the Electrochemical Society

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