A review on the reliability of GaN-based laser diodes

Nicola Trivellin*, Matteo Meneghini, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Gaudenzio Meneghesso

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

18 Scopus citations


University of Padova in collaboration with Panasonic Corp. has developed in the recent years an in depth reliability analysis of Blu-Ray InGaN Laser Diodes (LD) submitted to CW stress at different driving conditions. The reliability analysis has been focused towards a) the identification of the effects of current, temperature and optical field and b) the identification of the physical mechanism related to degradation. Results show that LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not affected by the ageing treatment. Degradation rate is found to depend on stress temperature and on current level, while it does not significantly depend on the optical field in the cavity. Within this paper we demonstrate that: (i) the degradation rate shows a linear correlation with stress current level; (ii) the Ith increase is correlated to the decrease in non-radiative lifetime (τnr); (iii) stress temperature acts as an accelerating factor for LD degradation; (iv) pure thermal storage does not significantly degrade LDs characteristics.

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Number of pages6
StatePublished - 20 Oct 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2 May 20106 May 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Conference2010 IEEE International Reliability Physics Symposium, IRPS 2010
CityGarden Grove, CA


  • Degradation
  • Gallium nitride
  • Laser diode
  • Non raditive lifetime
  • Reliability

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