A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

Sheng Hang, Chia-Ming Chuang, Yonghui Zhang, Chunshuang Chu, Kangkai Tian, Quan Zheng, Tingzhu Wu, Zhaojun Liu, Zi-Hui Zhang*, Qing Li, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

2 Scopus citations

Abstract

GaN-based micro-size light-emitting diode (mu LED) have emerged as a promising light sources for a wide range of applications in displays, visible light communication etc. In parallel with the two key technological bottlenecks: full-color scheme and mass transfer technique that need overcoming, it is known that the low external quantum efficiency (EQE) is also another challenge for mu LEDs from the perspective of manufacturing technology and device physics. The low EQE for GaN based mu LEDs is opposite to the common belief for GaN-based LEDs, such that GaN based LEDs are featured with high quantum efficiency, mechanically robust and energy saving. Therefore, in this work, we have reviewed the origin for the low EQE for mu LEDs. More importantly, we have also reported the underlying devices physics and proposed optimization strategies to boost the EQE for mu LEDs. Our work is targeted to provide a guideline for the community to develop high-performance GaN-based mu LEDs.

Original languageEnglish
Article number153002
Pages (from-to)1-15
Number of pages15
JournalJournal Physics D: Applied Physics
Volume54
Issue number15
DOIs
StatePublished - 15 Apr 2021

Keywords

  • GaN
  • micro-LED
  • EQE
  • size effect
  • surface recombination
  • LIGHT-EMITTING-DIODES
  • SURFACE RECOMBINATION
  • IMPROVED PERFORMANCE
  • PLANE GAN
  • DISPLAY
  • MECHANISM
  • LAYER
  • PASSIVATION
  • FABRICATION
  • REDUCTION

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