A review of hot-carrier degradation mechanisms in MOSFETs

Alexandre Acovic*, Giuseppe La Rosa, Yuan Chen Sun

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

72 Scopus citations

Abstract

We review the hot-carrier effects and reliability problem in MOSFET. The mechanisms that produce the substrate and gate current are discussed, and the various mechanisms for hot-carrier degradation are presented. DC and AC lifetime models are summarized, and the effects on a CMOS circuit explained. The effects of scaling on the hot-carrier induced degradation are presented and the influence of processing steps and stress temperature discussed. Ways to improve the reliability of MOSF̄ETs are then presented. Finally the reliability of SOI MOSFETs is compared to that of bulk MOSFETs.

Original languageEnglish
Pages (from-to)845-869
Number of pages25
JournalMicroelectronics Reliability
Volume36
Issue number7-8 SPEC. ISS.
DOIs
StatePublished - 1996

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