A Resistive-Gated IGFET Tetrode

Chen-Ming Hu; Richard S. Muller

doi:10.1109/T-ED.1971.17218

A Resistive-Gated IGFET Tetrode

Chen-Ming Hu, Richard S. Muller

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Studies of the properties of a new insulated-gate field-effect tetrode which Consists basically of an IGFET triode having a resistive-gate electrode with connections transverse to the source-drain dimension are described. Experimental tetrodes on silicon with nichrome gates are fabricated to demonstrate applications of the device as a mixer, an amplitude modulator, and an AGC amplifier. Theories are also developed to calculate the static and the high-frequency characteristics of the tetrode, and are found to be in good agreement with the experimental results.

Original language	English
Pages (from-to)	418-425
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	18
Issue number	7
DOIs	https://doi.org/10.1109/T-ED.1971.17218
State	Published - 1 Jan 1971

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A Resistive-Gated IGFET Tetrode

Abstract

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