A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications

Win San Khwa, Meng Fan Chang, Jau Yi Wu, Ming Hsiu Lee, Tzu Hsiang Su, Keng Hao Yang, Tien-Fu Chen, Tien Yen Wang, Hsiang Pang Li, Matthew Brightsky, Sangbum Kim, Hsiang Lan Lung, Chung Lam

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Engineering & Materials Science