A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering

Ray-Hua Horng; D. S. Wuu; S. C. Wei; S. H. Chan; C. Y. Kung

doi:10.1016/S0040-6090(98)01666-6

A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering

Ray-Hua Horng^*, D. S. Wuu, S. C. Wei, S. H. Chan, C. Y. Kung

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N₂ partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N₂ partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N₂ contents. An energy band model that can account for the experimental observation of PPC behavior is proposed.

Original language	English
Pages (from-to)	642-645
Number of pages	4
Journal	Thin Solid Films
Volume	343-344
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01666-6
State	Published - 1 Jan 1999

Keywords

GaN
Persistent photoconductivity
Sputtering

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title = "A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering",

abstract = "The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N2 partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N2 partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N2 contents. An energy band model that can account for the experimental observation of PPC behavior is proposed.",

keywords = "GaN, Persistent photoconductivity, Sputtering",

author = "Ray-Hua Horng and Wuu, {D. S.} and Wei, {S. C.} and Chan, {S. H.} and Kung, {C. Y.}",

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T1 - A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering

AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Wei, S. C.

AU - Chan, S. H.

AU - Kung, C. Y.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N2 partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N2 partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N2 contents. An energy band model that can account for the experimental observation of PPC behavior is proposed.

AB - The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N2 partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N2 partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N2 contents. An energy band model that can account for the experimental observation of PPC behavior is proposed.

KW - GaN

KW - Persistent photoconductivity

KW - Sputtering

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JF - Thin Solid Films

SN - 0040-6090

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ER -

A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering

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Keywords

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