A reliable Schottky barrier height extraction procedure

Bing-Yue Tsui, Tze Yu Fu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated. The TFE model can obtain accurate SBH with low SBH (∼0.3 eV) and high doping concentration (∼1×l020 cm-3). It is thus recommended that the proposed extraction procedure could be used to study the Schottky junction precisely.

Original languageEnglish
Title of host publication2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages196-199
Number of pages4
ISBN (Electronic)9781467387934
DOIs
StatePublished - 20 May 2016
Event29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan
Duration: 28 Mar 201631 Mar 2016

Publication series

NameIEEE International Conference on Microelectronic Test Structures
Volume2016-May

Conference

Conference29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
CountryJapan
CityYokohama
Period28/03/1631/03/16

Keywords

  • Schottky barrier height
  • field emission
  • image-force barrier lowering
  • thermionic emission
  • thermionic field emission

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