A reliable bi-polarity write/erase technology in flash EEPROMs

S. Aritome*, Shirota Riichiro, R. Kirisawa, T. Endoh, R. Nakayama, K. Sakui, F. Masuoka

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

42 Scopus citations

Abstract

The authors describe a technology for scaling down the flash E2PROM cell, which has a conventional self-aligned double poly-Si stacked structure. It is clarified experimentally that a flash memory cell written and erased by Fowler-Nordheim (F-N) tunneling has ten times the retention time of the conventional cell, which is written by channel-hot-electron (CHE) injection and erased by F-N tunneling. This difference of data retentivity between these two write/erase (W/E) technologies is due to decreasing the thin gate oxide leakage current by bi-polarity F-N tunneling stress. This improvement in data retention becomes more pronounced as the gate oxide thickness decreases. Therefore, a bipolarity F-N tunneling W/E technology, which enables a flash E2PROM cell to scale down its oxide thickness, shows promise as a key technology for realizing 16 Mb flash E2PROMs and beyond.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: 9 Dec 199012 Dec 1990

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