A Raman study of ZnSe at high pressure

Wu-Ching Chou*, C. M. Lin, R. S. Ro, C. S. Ho, D. Y. Hong, C. S. Yang, D. S. Chuu, T. J. Yang, J. Xu, E. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.

Original languageEnglish
Pages (from-to)266-273
Number of pages8
JournalChinese Journal of Physics
Issue number3
StatePublished - 1 Dec 1997

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