A quasi-planar thin film field emission diode

Kao Chao Lin*, Chuan Ping Juan, Rui Ling Lai, Hsia Wei Chen, Yu Ying Syu, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations


A novel quasi-planar thin-film field emitter is fabricated by thin-film deposition and wet etching processes. The spacing between the emitters and collectors could be well controlled on the basis of the thicknesses of Cr thin films, which create submicron gaps. A forming process increases emitter surface roughness and results in a higher field enhancement factor, which shows better field emission characteristics. The turn-on voltage (at which the current level is 100 nA) of the device with a Cr thin film thickness of 300nm is as low as 12 V, and the current fluctuation in I hour test at a driving voltage of 20 V represents a variation from -86 to +114%.

Original languageEnglish
Pages (from-to)7446-7449
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
StatePublished - 6 Nov 2007


  • Cr thin film
  • Forming process
  • Low turn-on voltage
  • Quasi-planar field emission diode

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