A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Yi-Ming Li, Ting Wei Tang, Shao Ming Yu

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions is proposed. Based on the solution of Schrödinger-Poisson equations, the developed quantum correction model is optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 3.0% of accuracy. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.

Original languageEnglish
Pages (from-to)491-495
Number of pages5
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
StatePublished - 1 Dec 2003

Keywords

  • double-gate MOS structure
  • inversion condition
  • quantum correction

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