A quantum approach to nanocrystal nonvolatile memory

Pei Yu Wang*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work establishes an accurate 3D physical model with quantum approach to analyze the small size nanocrystal (NC) nonvolatile memory. The basic memory performance, programming and erasing, is studied in detail. The trapping efficiency, Coulomb blockade and quantum confinement are the main factors affecting the memory performance. Tradeoff between these factors exists on the selection of NC size. The simulation results are also in agreement with other general experiment studies qualitatively.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages158-159
Number of pages2
DOIs
StatePublished - 11 Jul 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period25/04/1127/04/11

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  • Cite this

    Wang, P. Y., & Tsui, B-Y. (2011). A quantum approach to nanocrystal nonvolatile memory. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 158-159). [5872273] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872273