A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory

E. R. Hsieh, H. W. Cheng, Z. H. Huang, C. H. Chuang, S. P. Yang, Steve S. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The oxygen vacancy and mobile ions play major role on the resistance switching in a typical RRAM by the modulation of filament conduction. It is also known that soft-breakdown played a major role on the switching mechanism. However, the understanding of the mechanism involved in the soft-breakdown is not clear enough. In this paper, we demonstrated a pulsed RTN transient measurement technique which enables the determination of trap generation and its evolution with time. On the demonstrated sample with a HfON/Al2O3 MIM structure, different operations will generate different traps which can be revealed from the trap profiling. The soft-breakdown path can then be delineated for forming, SET/RESET processes. The results show that the path behaves like a cone, widening at the bottom electrode and narrowing on the top, with a neck and waist near 2 electrodes, which can properly describe the RRAM operations.

Original languageEnglish
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
DOIs
StatePublished - Apr 2020
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: 28 Apr 202030 May 2020

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2020-April
ISSN (Print)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period28/04/2030/05/20

Keywords

  • Oxygen-vacancy-based RAM
  • Resistance memory
  • RTN
  • RTN transient measurement
  • Soft-breakdown

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    Hsieh, E. R., Cheng, H. W., Huang, Z. H., Chuang, C. H., Yang, S. P., & Chung, S. S. (2020). A Pulsed RTN Transient Measurement Technique: Demonstration on the Understanding of the Switching in Resistance Memory. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings [9128893] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2020-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9128893