A program-erasable high-κ Hf0.3N0.2 O0.5 MIS capacitor with good retention

H. J. Yang*, Albert Chin, W. J. Chen, C. F. Cheng, W. L. Huang, I. J. Hsieh, S. P. McAlister

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We describe a programmable-erasable MIS capacitor with a single high-κ Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of ∼6.6 fF/μm2, low program and erase voltages of +5 and -5 V, respectively, and a large Δ Vfb memory window of 1.5 V. In addition, the 25 °C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.

Original languageEnglish
Pages (from-to)913-915
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number10
DOIs
StatePublished - 1 Oct 2007

Keywords

  • Capacitor
  • Dynamic random access memory (DRAM)
  • Erase
  • High-κ
  • Nonvolatile memory (NVM)
  • Program

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