We describe a programmable-erasable MIS capacitor with a single high-κ Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of ∼6.6 fF/μm2, low program and erase voltages of +5 and -5 V, respectively, and a large Δ Vfb memory window of 1.5 V. In addition, the 25 °C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
- Dynamic random access memory (DRAM)
- Nonvolatile memory (NVM)