A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design

Chen Wei Lin, Chih Hsiang Ho, Chao Lu, Chia-Tso Chao, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Operation characteristics of low temperature poly silicon thin-film transistor (LTPS-TFT) based systems vary significantly with design choices and parameters (i.e., process, device, circuit and system). Due to the lack of cross-layer simulation tool, conventional designs only optimize the design layers in isolation, leading to sub-optimal solutions. We present a cross-layer simulation framework for the design of LTPS-TFT Static Random Access Memory (SRAM). The proposed simulation framework optimizes design parameters considering the entire design space and hence, greatly reduces design complexity and efforts. The benefits of our proposed framework are illustrated by case studies.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages440-443
Number of pages4
DOIs
StatePublished - 31 Dec 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 3 Sep 20135 Sep 2013

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period3/09/135/09/13

Keywords

  • design optimization
  • LTPS
  • poly-Si
  • SRAM
  • TFT
  • yield estimation

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    Lin, C. W., Ho, C. H., Lu, C., Chao, C-T., & Roy, K. (2013). A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 440-443). [6650669] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650669