A process for high yield and high performance carbon nanotube field effect transistors

Tseng Chin Lee*, Bing-Yue Tsui, Pei Jer Tzeng, Ching Chiun Wang, Ming Jinn Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Carbon nanotube field effect transistors (CNTFETs) have been considered as one of the potential candidates for nanoelectronics beyond Si CMOS. However, it is not easy to have high performance CNTFETs with high yield currently. In this work, we proposed a local bottom-gate (LBG) CNTFETs combined with a novel device concept and optimized process technologies. High performance of CNTFET with low subthreshold swing of 139 mV/dec, high transconductance of 1.27 μS, and high Ion/Ioff ratio of 106 can be easily obtained with Ti source/drain contact after a post annealing process. Record high yield of 74% has been demonstrated. On the basis of the proposed process, lots of high performance CNTFETs can be obtained easily for advanced study on the electrical characteristics of CNTFETs in the future.

Original languageEnglish
Pages (from-to)666-669
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
StatePublished - 1 May 2010

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