A Precise Negative Bias Temperature Instability Sensor using Slew-Rate Monitor Circuitry

Ghosh Amlan, Brown Richard B., Rao Rahul M., Ching-Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

Negative Bias Temperature Instability (NBTI) has become an important cause of degradation in scaled PMOS devices, affecting power, performance, yield and reliability of circuits. This paper proposes a scheme to detect PMOS threshold voltage (V-TH) degradation using on-chip slew-rate monitor circuitry. The degradation in the PMOS threshold voltage is determined with high resolution by sensing the change in rise time in a stressed ring oscillator. Simulations in IBM's 65nm PD/SOI CMOS technology demonstrate good linearity and an output sensitivity of 0.25mV/mV using the proposed scheme.
Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems (ISCAS 2009)
PublisherIEEE
DOIs
StatePublished - 2009

Keywords

  • CMOS INVERTER; DELAY; MODEL

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