A practical SPICE macro model for the IGBT

Ying-Yu Tzou*, Lun Jun Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

A practical SPICE macro model of the insulated gate bipolar transistor (IGBT) is presented in this paper. The proposed IGBT behavior model is constructed based on an equivalent circuit of the device physical construction and its relevant parameters can be derived from the given data sheet. The proposed new model is especially suitable for the design of gate drive and snubber circuit by using circuit simulation. It is also very useful for the simulation of power electronics system in a system level. Simulation and experimental results of the IGBT switching behavior have been obtained to verify the proposed IGBT macro model.

Original languageEnglish
Title of host publicationIECON Proceedings (Industrial Electronics Conference)
Editors Anon
PublisherPubl by IEEE
Pages762-766
Number of pages5
ISBN (Print)0780308913
DOIs
StatePublished - 1 Dec 1993
EventProceedings of the 19th International Conference on Industrial Electronics, Control and Instrumentation - Maui, Hawaii, USA
Duration: 15 Nov 199318 Nov 1993

Publication series

NameIECON Proceedings (Industrial Electronics Conference)
Volume2

Conference

ConferenceProceedings of the 19th International Conference on Industrial Electronics, Control and Instrumentation
CityMaui, Hawaii, USA
Period15/11/9318/11/93

Fingerprint Dive into the research topics of 'A practical SPICE macro model for the IGBT'. Together they form a unique fingerprint.

  • Cite this

    Tzou, Y-Y., & Hsu, L. J. (1993). A practical SPICE macro model for the IGBT. In Anon (Ed.), IECON Proceedings (Industrial Electronics Conference) (pp. 762-766). (IECON Proceedings (Industrial Electronics Conference); Vol. 2). Publ by IEEE. https://doi.org/10.1109/IECON.1993.338985