A polar modulated CMOS class-E amplifier with a class-F driver stage

Wen A. Tsou*, Wen Shen Wuen, Kuei-Ann Wen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 μm CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V.

Original languageEnglish
Title of host publication3rd International Symposium on Intelligent Information Technology Application, IITA 2009
Pages658-661
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event3rd International Symposium on Intelligent Information Technology Application, IITA 2009 - NanChang, China
Duration: 21 Nov 200922 Nov 2009

Publication series

Name3rd International Symposium on Intelligent Information Technology Application, IITA 2009
Volume3

Conference

Conference3rd International Symposium on Intelligent Information Technology Application, IITA 2009
CountryChina
CityNanChang
Period21/11/0922/11/09

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