A physics-based transit time model for GaInP/GaAs HBT devices

Sheng Che Tseng*, Chin-Chun Meng, Wei Yu Chen, Jen Yi Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (IC, VCE) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (IC, VCE) more precisely. This model has obvious advantage over the VBIC model to show the relation between the ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices.

Original languageEnglish
Title of host publicationAPMC 2005
Subtitle of host publicationAsia-Pacific Microwave Conference Proceedings 2005
Pages1-4
Number of pages4
DOIs
StatePublished - 4 Dec 2005
EventAPMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
Duration: 4 Dec 20057 Dec 2005

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

ConferenceAPMC 2005: Asia-Pacific Microwave Conference 2005
CountryChina
CitySuzhou
Period4/12/057/12/05

Keywords

  • GaInP/GaAs HBT
  • HICUM and VBIC
  • Minority charge
  • Transit time

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