A Physics-Based MOSFET Noise Model for Circuit Simulators

Kwok K. Hung*, Ping K. Ko, Chen-Ming Hu, Yiu C. Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

192 Scopus citations

Abstract

A physics-based MOSFET noise model that can accurately predict the noise characteristics over the linear, saturation, and subthreshold operating regions but is still simple enough to be implemented in any general-purpose circuit simulator has been developed. Expressions for the flicker noise power are derived on the basis of a theory that incorporates both the oxide-trap-induced carrier number and correlated surface mobility fluctuation mechanisms. The model is applicable to long-channel, as well as submicron n-and p-channel MOSFET’s fabricated by different technologies, and all the model parameters can be easily extracted from routine I–V and noise measurements.

Original languageEnglish
Pages (from-to)1323-1333
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume37
Issue number5
DOIs
StatePublished - 1 Jan 1990

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