A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

Jin He*, Xuemei Xi, Mansun Chan, Kanyu Cao, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In tills paper, a physics-based analytical C - continuous model of MOSFET surface potential and capacitance from the accumulation to the depletion region is presented and the result is compared with 2-D numerical device simulation. Starting from the Poisson equation, an exact solution of the surface potential in the accumulation region is derived. Then, the C - continuous capacitance expression is obtained and which gives a good agreement with 2-D device simulation. In addition, the importance of this model is demonstrated in the analysis of harmonic distortion.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages302-305
Number of pages4
StatePublished - 1 Dec 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: 23 Feb 200327 Feb 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Conference

Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period23/02/0327/02/03

Keywords

  • Compact modeling
  • MOSFETs
  • Surface potential
  • The capacitance

Fingerprint Dive into the research topics of 'A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region'. Together they form a unique fingerprint.

Cite this