A physics based analytical model of undoped body MOSFETs

Jin He*, Jane Xi, Mansun Chan, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

A continuous physics based analytic model of undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the solution of the Poisson equation into Pao-Sah integrated current equation using SPP approach. The closed form solutions of band bending and the inversion charge as a function of gate voltage and channel voltage were first derived from the combination of Gauss's law with the Poisson equation. Then, a continuous non-charge-sheet-based analytical model is developed for the undoped body MOSFETs.

Original languageEnglish
Pages1192-1195
Number of pages4
StatePublished - 1 Dec 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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