A patterned dielectric support process for high performance passive fabrication

C. C. Chen; Ssu Ying Chen; Yu-Ting Cheng

doi:10.1109/LMWC.2007.915030

A patterned dielectric support process for high performance passive fabrication

C. C. Chen^*, Ssu Ying Chen, Yu-Ting Cheng

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This letter presents a micromachining process to effectively reduce substrate loss via a structure of patterned oxide/nitride fins on a silicon substrate with a resistivity of 1 Ω-cm. Experimental results demonstrate that the insertion loss of a coplanar waveguide (CPW) deposited on the structure can be lowered to the value of 4.33 dB/cm at 40 GHz. Meanwhile, an analytical model is developed to predict the characteristics of the CPW.

Original language	English
Pages (from-to)	82-84
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2007.915030
State	Published - 1 Feb 2008

Keywords

Coplanar waveguide (CPW)
Effective dielectric constant
Equivalent impedance
Oxide/nitride fins
Radio frequency integrated circuit (RFIC)
Substrate loss

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@article{8e96bd53810c4875bfbb07f8a2dd2528,

title = "A patterned dielectric support process for high performance passive fabrication",

abstract = "This letter presents a micromachining process to effectively reduce substrate loss via a structure of patterned oxide/nitride fins on a silicon substrate with a resistivity of 1 Ω-cm. Experimental results demonstrate that the insertion loss of a coplanar waveguide (CPW) deposited on the structure can be lowered to the value of 4.33 dB/cm at 40 GHz. Meanwhile, an analytical model is developed to predict the characteristics of the CPW.",

keywords = "Coplanar waveguide (CPW), Effective dielectric constant, Equivalent impedance, Oxide/nitride fins, Radio frequency integrated circuit (RFIC), Substrate loss",

author = "Chen, {C. C.} and Chen, {Ssu Ying} and Yu-Ting Cheng",

year = "2008",

month = feb,

day = "1",

doi = "10.1109/LMWC.2007.915030",

language = "English",

volume = "18",

pages = "82--84",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A patterned dielectric support process for high performance passive fabrication

AU - Chen, C. C.

AU - Chen, Ssu Ying

AU - Cheng, Yu-Ting

PY - 2008/2/1

Y1 - 2008/2/1

N2 - This letter presents a micromachining process to effectively reduce substrate loss via a structure of patterned oxide/nitride fins on a silicon substrate with a resistivity of 1 Ω-cm. Experimental results demonstrate that the insertion loss of a coplanar waveguide (CPW) deposited on the structure can be lowered to the value of 4.33 dB/cm at 40 GHz. Meanwhile, an analytical model is developed to predict the characteristics of the CPW.

AB - This letter presents a micromachining process to effectively reduce substrate loss via a structure of patterned oxide/nitride fins on a silicon substrate with a resistivity of 1 Ω-cm. Experimental results demonstrate that the insertion loss of a coplanar waveguide (CPW) deposited on the structure can be lowered to the value of 4.33 dB/cm at 40 GHz. Meanwhile, an analytical model is developed to predict the characteristics of the CPW.

KW - Coplanar waveguide (CPW)

KW - Effective dielectric constant

KW - Equivalent impedance

KW - Oxide/nitride fins

KW - Radio frequency integrated circuit (RFIC)

KW - Substrate loss

UR - http://www.scopus.com/inward/record.url?scp=38949120098&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2007.915030

DO - 10.1109/LMWC.2007.915030

M3 - Article

AN - SCOPUS:38949120098

VL - 18

SP - 82

EP - 84

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 2

ER -