A parallel computational technique for high frequency HBT circuit simulation

Yi-Ming Li*, Kuen Yu Huang, Cheng Kai Chen, C. P. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a parallel-in-waveform simulation technique for high frequency heterojunction bipolar transistor (HBT) circuit characterization. On the contrary to the conventional frequency domain analysis, the HBT circuit equations are solved with waveform relaxation and monotone iterative methods in large signal time domain. This approach has been applied to calculate HBT circuit RF output power, the 3rd order inter-modulation and intercept point. The studied unusually high linearity of HBTs' circuit at ultra high frequency region is quite useful for wireless applications.

Original languageEnglish
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages376-379
Number of pages4
StatePublished - Jan 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: 21 Apr 200225 Apr 2002

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Conference

Conference2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period21/04/0225/04/02

Keywords

  • HBT circuit
  • Parallel-in-waveform
  • RF characteristics

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